532 nm laser sources based on intracavity frequency doubling of multi-edge-emitting diode lasers

Kang Li*, N. J. Copner, C. B.E. Gawith, Ian G. Knight, Hans Ulrich Pfeiffer, Bob Musk

*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion CynhadleddTrafodion Cynhadledd (Nid-Cyfnodolyn fathau)

1 Dyfyniadau(SciVal)

Crynodeb

Intra-cavity frequency doubling (ICFD) of electrically and optically surface emitting diode lasers in the near IR region become more interesting [1-3] and will have an enormous impact in the display market. In this paper, Watts-level green laser is generated by ICFD of multi-emitters laser bar using a MgO-doped periodically poled lithium niobate (MgO: PPLN) bulk crystal, which has the potential to be scalable to high production volumes and low costs with immense implication for laser-based projection displays.

Iaith wreiddiolSaesneg
TeitlSolid State Lasers XIX
Is-deitlTechnology and Devices
CyhoeddwrSPIE
ISBN (Argraffiad)9780819479747, 0819479748
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 2010
Cyhoeddwyd yn allanolIe
DigwyddiadSolid State Lasers XIX: Technology and Devices - San Francisco, CA, Unol Daleithiau America
Hyd: 24 Ion 201028 Ion 2010

Cyfres gyhoeddiadau

EnwProceedings of SPIE - The International Society for Optical Engineering
Cyfrol7578
ISSN (Argraffiad)0277-786X

Cynhadledd

CynhadleddSolid State Lasers XIX: Technology and Devices
Gwlad/TiriogaethUnol Daleithiau America
DinasSan Francisco, CA
Cyfnod24 Ion 201028 Ion 2010

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