A Simplified Method for Patterning Graphene on Dielectric Layers

Håkon I. Røst, Benjamen P. Reed, Frode S. Strand, Joseph A. Durk, D. Andrew Evans, Antonija Grubišić-čabo, Gary Wan, Mattia Cattelan, Mauricio J. Prieto, Daniel M. Gottlob, Liviu C. Tănase, Lucas De Souza Caldas, Thomas Schmidt, Anton Tadich, Bruce C. C. Cowie, Rajesh Kumar Chellappan, Justin W. Wells, Simon P. Cooil

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

176 Wedi eu Llwytho i Lawr (Pure)


The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
Iaith wreiddiolSaesneg
Tudalennau (o-i)37510-37516
Nifer y tudalennau7
CyfnodolynACS Applied Materials & Interfaces
Rhif cyhoeddi31
Dyddiad ar-lein cynnar30 Gorff 2021
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 11 Awst 2021

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