Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

C. E. Finlayson*, A. Amezcua-Correa, P. J.A. Sazio, N. F. Baril, J. V. Badding

*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

51 Dyfyniadau(SciVal)

Crynodeb

Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.

Iaith wreiddiolSaesneg
Rhif yr erthygl132110
Nifer y tudalennau3
CyfnodolynApplied Physics Letters
Cyfrol90
Rhif cyhoeddi13
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 27 Maw 2007
Cyhoeddwyd yn allanolIe

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