TY - JOUR
T1 - Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts
AU - von der Emde, M.
AU - Zahn, D. R.T.
AU - Schultz, Ch
AU - Evans, D. A.
AU - Horn, K.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1993/6/2
Y1 - 1993/6/2
N2 - Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electrical transport measurements, in order to clarify the dependence of Schottky barrier height on metal and interface properties. Metals were deposited onto clean cleaved GaP(110) in ultrahigh vacuum and the temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were recorded in situ. The Schottky barriers (F{cyrillic}B) were determined for nine metals (Na, Mg, In, Ti, Sn, Sb, Ag, Au and Pt), covering a wide range of metal work function (F{cyrillic}M) from 2.75 to 5.65 eV. The results reveal a weak dependence of F{cyrillic}B on F{cyrillic}M with S=dF{cyrillic}B/dF{cyrillic}M ≈ 0.14, which is consistent with a strong Fermi level pinning by induced gap states.
AB - Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electrical transport measurements, in order to clarify the dependence of Schottky barrier height on metal and interface properties. Metals were deposited onto clean cleaved GaP(110) in ultrahigh vacuum and the temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were recorded in situ. The Schottky barriers (F{cyrillic}B) were determined for nine metals (Na, Mg, In, Ti, Sn, Sb, Ag, Au and Pt), covering a wide range of metal work function (F{cyrillic}M) from 2.75 to 5.65 eV. The results reveal a weak dependence of F{cyrillic}B on F{cyrillic}M with S=dF{cyrillic}B/dF{cyrillic}M ≈ 0.14, which is consistent with a strong Fermi level pinning by induced gap states.
UR - http://www.scopus.com/inward/record.url?scp=0027905766&partnerID=8YFLogxK
U2 - 10.1016/0169-4332(93)90570-2
DO - 10.1016/0169-4332(93)90570-2
M3 - Article
AN - SCOPUS:0027905766
SN - 0169-4332
VL - 70-71
SP - 507
EP - 510
JO - Applied Surface Science
JF - Applied Surface Science
IS - Part 2
ER -