Gold and silver Schottky barriers on ZnS(110)

D. Wolfframm; D. A. Evans; G. Neuhold; K. Horn

doi:10.1063/1.372433

Gold and silver Schottky barriers on ZnS(110)

D. Wolfframm^*, D. A. Evans, G. Neuhold, K. Horn

^*Awdur cyfatebol y gwaith hwn

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Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

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The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φ_B^Ag=2.19 and φ_B^Ag= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	3905-3911
Nifer y tudalennau	7
Cyfnodolyn	Journal of Applied Physics
Cyfrol	87
Rhif cyhoeddi	8
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1063/1.372433
Statws	Cyhoeddwyd - 15 Ebr 2000

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10.1063/1.372433

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title = "Gold and silver Schottky barriers on ZnS(110)",

abstract = "The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φBAg=2.19 and φBAg= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.",

author = "D. Wolfframm and Evans, {D. A.} and G. Neuhold and K. Horn",

year = "2000",

month = apr,

day = "15",

doi = "10.1063/1.372433",

language = "English",

volume = "87",

pages = "3905--3911",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Gold and silver Schottky barriers on ZnS(110)

AU - Wolfframm, D.

AU - Evans, D. A.

AU - Neuhold, G.

AU - Horn, K.

PY - 2000/4/15

Y1 - 2000/4/15

N2 - The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φBAg=2.19 and φBAg= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.

AB - The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φBAg=2.19 and φBAg= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.

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DO - 10.1063/1.372433

M3 - Article

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VL - 87

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Gold and silver Schottky barriers on ZnS(110)

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