In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Simon Phillip Cooil, Federico Mazzola, Hagen W. Klemm, Gina Peschel, Yuran R. Niu, Alexei A. Zakharov, Michelle Y. Simmons, Thomas Schmidt, David Evans, Jill A. Miwa, Justin W Wells

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

8 Dyfyniadau (Scopus)
86 Wedi eu Llwytho i Lawr (Pure)

Crynodeb

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states
Iaith wreiddiolSaesneg
Tudalennau (o-i)1683-1688
Nifer y tudalennau6
CyfnodolynACS Nano
Cyfrol11
Rhif cyhoeddi2
Dyddiad ar-lein cynnar13 Chwef 2017
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 28 Chwef 2017

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