In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Simon Phillip Cooil; Federico Mazzola; Hagen W. Klemm; Gina Peschel; Yuran R. Niu; Alexei A. Zakharov; Michelle Y. Simmons; Thomas Schmidt; David Evans; Jill A. Miwa; Justin W Wells

doi:10.1021/acsnano.6b07359

In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Simon Phillip Cooil, Federico Mazzola, Hagen W. Klemm, Gina Peschel, Yuran R. Niu, Alexei A. Zakharov, Michelle Y. Simmons, Thomas Schmidt, David Evans, Jill A. Miwa, Justin W Wells

Ffiseg

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

7 Dyfyniadau(SciVal)

82 Wedi eu Llwytho i Lawr (Pure)

Crynodeb

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	1683-1688
Nifer y tudalennau	6
Cyfnodolyn	ACS Nano
Cyfrol	11
Rhif cyhoeddi	2
Dyddiad ar-lein cynnar	13 Chwef 2017
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1021/acsnano.6b07359
Statws	Cyhoeddwyd - 28 Chwef 2017

Mynediad at Ddogfen

10.1021/acsnano.6b07359

In situ Patterning of Ultra Sharp Dopant Profiles in SiliconLlawysgrif awdur wedi’i dderbyn, 47.9 KB

Cysylltiad parhaol

Dolen barhaus

Ffeiliau eraill a chysylltiadau

http://hdl.handle.net/2160/45251

Andrew Evans
- dneaber.acuk
- Cyfadran Busnes a’r Gwyddorau Ffisegol, Ffiseg - Professor, Head of Department (Physics)
Unigolyn: Dysgu ac Ymchwil, Arall

Dyfynnu hyn

@article{0d1bc254f5db49a2852202189f95c64a,

title = "In Situ Patterning of Ultrasharp Dopant Profiles in Silicon",

abstract = "We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states",

keywords = "2DEG, delta layers, LEEM, low-energy electron patterning, PEEM, silicon quantum confinement",

author = "Cooil, {Simon Phillip} and Federico Mazzola and Klemm, {Hagen W.} and Gina Peschel and Niu, {Yuran R.} and Zakharov, {Alexei A.} and Simmons, {Michelle Y.} and Thomas Schmidt and David Evans and Miwa, {Jill A.} and Wells, {Justin W}",

year = "2017",

month = feb,

day = "28",

doi = "10.1021/acsnano.6b07359",

language = "English",

volume = "11",

pages = "1683--1688",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "2",

}

TY - JOUR

T1 - In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

AU - Cooil, Simon Phillip

AU - Mazzola, Federico

AU - Klemm, Hagen W.

AU - Peschel, Gina

AU - Niu, Yuran R.

AU - Zakharov, Alexei A.

AU - Simmons, Michelle Y.

AU - Schmidt, Thomas

AU - Evans, David

AU - Miwa, Jill A.

AU - Wells, Justin W

PY - 2017/2/28

Y1 - 2017/2/28

N2 - We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states

AB - We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states

KW - 2DEG

KW - delta layers

KW - LEEM

KW - low-energy electron patterning

KW - PEEM

KW - silicon quantum confinement

UR - http://hdl.handle.net/2160/45251

U2 - 10.1021/acsnano.6b07359

DO - 10.1021/acsnano.6b07359

M3 - Article

C2 - 28182399

SN - 1936-0851

VL - 11

SP - 1683

EP - 1688

JO - ACS Nano

JF - ACS Nano

IS - 2

ER -

In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Crynodeb

Mynediad at Ddogfen

Cysylltiad parhaol

Ffeiliau eraill a chysylltiadau

Ôl bys

Proffiliau

Andrew Evans

Dyfynnu hyn