Numerical investigation of on-chip wavelength conversion based on InP/In1−xGaxAsyP1−y semiconductor waveguide platforms

Jin Wen; Kang Li; Yongkang Gong; Bethan Copner; Ben Hughes; Michael A. Campbell; Mattia Lazzaini; Lina Duan; Chengju Ma; Wei Fan; Zhenan Jia; Haiwei Fu; Nigel Copner

doi:10.1016/j.optcom.2020.125921

Numerical investigation of on-chip wavelength conversion based on InP/In_1−xGa_xAs_yP_1−y semiconductor waveguide platforms

Jin Wen^*
, Kang Li
, Yongkang Gong
, Bethan Copner
, Ben Hughes
, Michael A. Campbell
, Mattia Lazzaini
, Lina Duan
, Chengju Ma
, Wei Fan
, Zhenan Jia
, Haiwei Fu
, Nigel Copner

^*Awdur cyfatebol y gwaith hwn

Xi'an Shiyou University
Shaanxi Engineering Research Center of Oil and Gas Resource Optical Fiber Detection
Shaanxi Key Laboratory of Measurement and Control Technology for Oil and Gas Wells
University of South Wales
Cardiff University
National Physical Laboratory

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

7 Dyfyniadau (Scopus)

Crynodeb

We design the high confinement InP/In_1−xGa_xAs_yP_1−y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In_1−xGa_xAs_yP_1−y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency −26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In_1−xGa_xAs_yP_1−y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.

Iaith wreiddiol	Saesneg
Rhif yr erthygl	125921
Cyfnodolyn	Optics Communications
Cyfrol	473
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1016/j.optcom.2020.125921
Statws	Cyhoeddwyd - 15 Hyd 2020
Cyhoeddwyd yn allanol	Ie

Mynediad at Ddogfen

10.1016/j.optcom.2020.125921

Cysylltiad parhaol

Dolen barhaus

Ffeiliau eraill a chysylltiadau

Dolen i’r cyhoeddiad yn Scopus

Dyfynnu hyn

@article{35a7a00bd7c049cc8d35964ae5195440,

title = "Numerical investigation of on-chip wavelength conversion based on InP/In1−xGaxAsyP1−y semiconductor waveguide platforms",

abstract = "We design the high confinement InP/In1−xGaxAsyP1−y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1−xGaxAsyP1−y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency −26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1−xGaxAsyP1−y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.",

keywords = "Four-wave mixing, InP/InGaAsP waveguide, Nonlinear optics, Wavelength conversion",

author = "Jin Wen and Kang Li and Yongkang Gong and Bethan Copner and Ben Hughes and Campbell, \{Michael A.\} and Mattia Lazzaini and Lina Duan and Chengju Ma and Wei Fan and Zhenan Jia and Haiwei Fu and Nigel Copner",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No. 61505160 , the Innovation Capability Support Program of Shaanxi China (Program No. 2018KJXX-042 ), the Natural Science Basic Research Program of Shaanxi China (Program No. 2019JM-084 ), the 2015 Foshan Technology Innovation Group Project (Advanced Solid State Light Source Application and Innovation Team) and the National Physical Laboratory Directors{\textquoteright} Science and Engineering Fund Investigators Award UK (project number 06. 2019). Publisher Copyright: {\textcopyright} 2020",

year = "2020",

month = oct,

day = "15",

doi = "10.1016/j.optcom.2020.125921",

language = "English",

volume = "473",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier",

}

TY - JOUR

T1 - Numerical investigation of on-chip wavelength conversion based on InP/In1−xGaxAsyP1−y semiconductor waveguide platforms

AU - Wen, Jin

AU - Li, Kang

AU - Gong, Yongkang

AU - Copner, Bethan

AU - Hughes, Ben

AU - Campbell, Michael A.

AU - Lazzaini, Mattia

AU - Duan, Lina

AU - Ma, Chengju

AU - Fan, Wei

AU - Jia, Zhenan

AU - Fu, Haiwei

AU - Copner, Nigel

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No. 61505160 , the Innovation Capability Support Program of Shaanxi China (Program No. 2018KJXX-042 ), the Natural Science Basic Research Program of Shaanxi China (Program No. 2019JM-084 ), the 2015 Foshan Technology Innovation Group Project (Advanced Solid State Light Source Application and Innovation Team) and the National Physical Laboratory Directors’ Science and Engineering Fund Investigators Award UK (project number 06. 2019). Publisher Copyright: © 2020

PY - 2020/10/15

Y1 - 2020/10/15

N2 - We design the high confinement InP/In1−xGaxAsyP1−y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1−xGaxAsyP1−y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency −26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1−xGaxAsyP1−y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.

AB - We design the high confinement InP/In1−xGaxAsyP1−y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1−xGaxAsyP1−y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency −26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1−xGaxAsyP1−y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.

KW - Four-wave mixing

KW - InP/InGaAsP waveguide

KW - Nonlinear optics

KW - Wavelength conversion

UR - https://www.scopus.com/pages/publications/85083333871

U2 - 10.1016/j.optcom.2020.125921

DO - 10.1016/j.optcom.2020.125921

M3 - Article

AN - SCOPUS:85083333871

SN - 0030-4018

VL - 473

JO - Optics Communications

JF - Optics Communications

M1 - 125921

ER -