Observation and origin of the Δ manifold in Si:P δ layers

Ann Julie Holt*, Sanjoy K. Mahatha, Raluca Maria Stan, Frode S. Strand, Thomas Nyborg, Davide Curcio, Alex K. Schenk, Simon P. Cooil, Marco Bianchi, Justin W. Wells, Philip Hofmann, Jill A. Miwa

*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid


By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from 4.0nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the Δ manifold is revealed. Moreover, the number of carriers hosted within the Δ manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.

Iaith wreiddiolSaesneg
Rhif yr erthygl121402
CyfnodolynPhysical Review B
Rhif cyhoeddi12
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 15 Maw 2020

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