Oxidation of ruthenium thin films using atomic oxygen

A. P. McCoy; J. Bogan; A. Brady; G. Hughes

doi:10.1016/j.tsf.2015.11.024

Oxidation of ruthenium thin films using atomic oxygen

A. P. McCoy^*
, J. Bogan
, A. Brady
, G. Hughes

^*Awdur cyfatebol y gwaith hwn

Dublin City University

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

10 Dyfyniadau (Scopus)

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In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (∼ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO₂ at exposures as low as ∼ 10² L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO₂. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment.

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	112-116
Nifer y tudalennau	5
Cyfnodolyn	Thin Solid Films
Cyfrol	597
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1016/j.tsf.2015.11.024
Statws	Cyhoeddwyd - 31 Rhag 2015
Cyhoeddwyd yn allanol	Ie

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10.1016/j.tsf.2015.11.024

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@article{4f166e24a68d40eea370160333db82a5,

title = "Oxidation of ruthenium thin films using atomic oxygen",

abstract = "In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (∼ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO2 at exposures as low as ∼ 102 L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO2. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment.",

keywords = "Atomic oxygen, Catalysis, ruthenium catalysis, Oxidation, RuO, Ruthenium, Ruthenium oxide, XPS",

author = "McCoy, \{A. P.\} and J. Bogan and A. Brady and G. Hughes",

note = "Funding Information: The authors would like to gratefully acknowledge financial support from SFI under the TIDA Programme ( 13/TIDA/I2753 ) and the SFI PI programme ( 13/IA/1955 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = dec,

day = "31",

doi = "10.1016/j.tsf.2015.11.024",

language = "English",

volume = "597",

pages = "112--116",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Oxidation of ruthenium thin films using atomic oxygen

AU - McCoy, A. P.

AU - Bogan, J.

AU - Brady, A.

AU - Hughes, G.

N1 - Funding Information: The authors would like to gratefully acknowledge financial support from SFI under the TIDA Programme ( 13/TIDA/I2753 ) and the SFI PI programme ( 13/IA/1955 ). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/12/31

Y1 - 2015/12/31

N2 - In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (∼ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO2 at exposures as low as ∼ 102 L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO2. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment.

AB - In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (∼ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO2 at exposures as low as ∼ 102 L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO2. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment.

KW - Atomic oxygen

KW - Catalysis, ruthenium catalysis

KW - Oxidation

KW - RuO

KW - Ruthenium

KW - Ruthenium oxide

KW - XPS

UR - https://www.scopus.com/pages/publications/84959553304

U2 - 10.1016/j.tsf.2015.11.024

DO - 10.1016/j.tsf.2015.11.024

M3 - Article

AN - SCOPUS:84959553304

SN - 0040-6090

VL - 597

SP - 112

EP - 116

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Oxidation of ruthenium thin films using atomic oxygen

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