Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

Ch Maierhofer; D. R.T. Zahn; D. A. Evans; K. Horn

doi:10.1063/1.352837

Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

Ch Maierhofer^*, D. R.T. Zahn, D. A. Evans, K. Horn

^*Awdur cyfatebol y gwaith hwn

Adran Ffiseg

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

Crynodeb

Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔE_v.

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	4089-4091
Nifer y tudalennau	3
Cyfnodolyn	Journal of Applied Physics
Cyfrol	73
Rhif cyhoeddi	8
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1063/1.352837
Statws	Cyhoeddwyd - 1993

Mynediad at Ddogfen

10.1063/1.352837

Cysylltiad parhaol

Dolen barhaus

Ffeiliau eraill a chysylltiadau

Dolen i’r cyhoeddiad yn Scopus

Dyfynnu hyn

@article{496e4d055f10400ab7367bee563c9ea1,

title = "Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions",

abstract = "Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔEv.",

author = "Ch Maierhofer and Zahn, {D. R.T.} and Evans, {D. A.} and K. Horn",

year = "1993",

doi = "10.1063/1.352837",

language = "English",

volume = "73",

pages = "4089--4091",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

AU - Maierhofer, Ch

AU - Zahn, D. R.T.

AU - Evans, D. A.

AU - Horn, K.

PY - 1993

Y1 - 1993

N2 - Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔEv.

AB - Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔEv.

UR - http://www.scopus.com/inward/record.url?scp=36449004391&partnerID=8YFLogxK

U2 - 10.1063/1.352837

DO - 10.1063/1.352837

M3 - Article

AN - SCOPUS:36449004391

SN - 0021-8979

VL - 73

SP - 4089

EP - 4091

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

Crynodeb

Mynediad at Ddogfen

Cysylltiad parhaol

Ffeiliau eraill a chysylltiadau

Ôl bys

Dyfynnu hyn