The interaction of platinum with GaP(110): band bending and surface photovoltage effects

D. A. Evans*, T. P. Chen, Th Chassé, K. Horn

*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

Crynodeb

The study of metals deposited on semiconductor surfaces is important to determine the chemical and electronic properties of these interfaces. In the present study, the formation of PtGaP(110) interfaces at 150 and 300 K was monitored by core and valence level photoelectron spectroscopy using synchrotron radiation. Detailed analysis of band-bending reveals a strong surface photovoltage (SPV) effect, even at the higher temperature. The measured barrier height (φbn = 1.5 eV) is similar to values for chemically very different metal contacts on n-GaP(110). The temperature, metal coverage and photon flux dependence of the SPV is determined and interpreted in terms of calculations which consider the relevant current transport mechanism across the developing interface.

Iaith wreiddiolSaesneg
Tudalennau (o-i)233-241
Nifer y tudalennau9
CyfnodolynApplied Surface Science
Cyfrol56-58
Rhif cyhoeddiPart 1
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 1992

Ôl bys

Gweld gwybodaeth am bynciau ymchwil 'The interaction of platinum with GaP(110): band bending and surface photovoltage effects'. Gyda’i gilydd, maen nhw’n ffurfio ôl bys unigryw.

Dyfynnu hyn