Transport and optical gaps and energy band alignment at organic-inorganic interfaces

D. A. Evans; Alex Raymond Vearey-Roberts; O. R. Roberts; G. T. Williams; S. P. Cooil; D. P. Langstaff; G. Cabailh; I. T. McGovern; J. P. Goss

doi:10.1063/1.4823518

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

D. A. Evans, Alex Raymond Vearey-Roberts, O. R. Roberts, G. T. Williams, S. P. Cooil, D. P. Langstaff, G. Cabailh, I. T. McGovern, J. P. Goss

Adran Ffiseg

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

4 Dyfyniadau (Scopus)

222 Wedi eu Llwytho i Lawr (Pure)

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The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.

Iaith wreiddiol	Saesneg
Rhif yr erthygl	123701
Nifer y tudalennau	8
Cyfnodolyn	Journal of Applied Physics
Cyfrol	114
Rhif cyhoeddi	12
Dyddiad ar-lein cynnar	26 Medi 2013
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1063/1.4823518
Statws	Cyhoeddwyd - 01 Hyd 2013

Mynediad at Ddogfen

10.1063/1.4823518

Evans-JAP-14-12-123701-2013Fersiwn derfynol wedi’i chyhoeddi, 2.72 MB

Cysylltiad parhaol

Dolen barhaus

Ffeiliau eraill a chysylltiadau

http://hdl.handle.net/2160/12243

1 Wedi Gorffen

Photoelectron Spectroscopy and Microscopy using Synchrotron Radiation for Exploiting Diamond surfaces and Interfaces
Evans, A. (Prif Ymchwilydd)
Engineering & Physical Sciences Research Council
01 Hyd 2009 → 30 Medi 2013
Prosiect: Ymchwil a ariannwyd yn allanol

Dyfynnu hyn

@article{09bba8247a0442c5bd6ab005c1c56f2f,

title = "Transport and optical gaps and energy band alignment at organic-inorganic interfaces",

abstract = "The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.",

keywords = "photoemission, INTERFACE, energetics, III-V semiconductor, ORGANIC SEMICONDUCTORS",

author = "Evans, {D. A.} and Vearey-Roberts, {Alex Raymond} and Roberts, {O. R.} and Williams, {G. T.} and Cooil, {S. P.} and Langstaff, {D. P.} and G. Cabailh and McGovern, {I. T.} and Goss, {J. P.}",

note = "Evans, D. A., Vearey-Roberts, A. R., Roberts, O. R., Williams, G. T., Cooil, S. P., Langstaff, D. P., Cabailh, G., McGovern, I. T., Goss, J. P. (2013). Transport and optical gaps and energy band alignment at organic-inorganic interfaces. Journal of Applied Physics, 114 (12), [123701]",

year = "2013",

month = oct,

day = "1",

doi = "10.1063/1.4823518",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

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TY - JOUR

T1 - Transport and optical gaps and energy band alignment at organic-inorganic interfaces

AU - Evans, D. A.

AU - Vearey-Roberts, Alex Raymond

AU - Roberts, O. R.

AU - Williams, G. T.

AU - Cooil, S. P.

AU - Langstaff, D. P.

AU - Cabailh, G.

AU - McGovern, I. T.

AU - Goss, J. P.

N1 - Evans, D. A., Vearey-Roberts, A. R., Roberts, O. R., Williams, G. T., Cooil, S. P., Langstaff, D. P., Cabailh, G., McGovern, I. T., Goss, J. P. (2013). Transport and optical gaps and energy band alignment at organic-inorganic interfaces. Journal of Applied Physics, 114 (12), [123701]

PY - 2013/10/1

Y1 - 2013/10/1

N2 - The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.

AB - The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.

KW - photoemission

KW - INTERFACE

KW - energetics

KW - III-V semiconductor

KW - ORGANIC SEMICONDUCTORS

UR - http://hdl.handle.net/2160/12243

U2 - 10.1063/1.4823518

DO - 10.1063/1.4823518

M3 - Article

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123701

ER -

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

Crynodeb

Mynediad at Ddogfen

Cysylltiad parhaol

Ffeiliau eraill a chysylltiadau

Ôl bys

Prosiectau

Photoelectron Spectroscopy and Microscopy using Synchrotron Radiation for Exploiting Diamond surfaces and Interfaces

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