532 nm laser sources based on intracavity frequency doubling of multi-edge-emitting diode lasers

Kang Li*, N. J. Copner, C. B.E. Gawith, Ian G. Knight, Hans Ulrich Pfeiffer, Bob Musk

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Proceeding (Non-Journal item)

1 Citation (SciVal)

Abstract

Intra-cavity frequency doubling (ICFD) of electrically and optically surface emitting diode lasers in the near IR region become more interesting [1-3] and will have an enormous impact in the display market. In this paper, Watts-level green laser is generated by ICFD of multi-emitters laser bar using a MgO-doped periodically poled lithium niobate (MgO: PPLN) bulk crystal, which has the potential to be scalable to high production volumes and low costs with immense implication for laser-based projection displays.

Original languageEnglish
Title of host publicationSolid State Lasers XIX
Subtitle of host publicationTechnology and Devices
PublisherSPIE
ISBN (Print)9780819479747, 0819479748
DOIs
Publication statusPublished - 2010
Externally publishedYes
EventSolid State Lasers XIX: Technology and Devices - San Francisco, CA, United States of America
Duration: 24 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7578
ISSN (Print)0277-786X

Conference

ConferenceSolid State Lasers XIX: Technology and Devices
Country/TerritoryUnited States of America
CitySan Francisco, CA
Period24 Jan 201028 Jan 2010

Keywords

  • Diode lasers
  • Frequency conversion
  • Laser resonators

Fingerprint

Dive into the research topics of '532 nm laser sources based on intracavity frequency doubling of multi-edge-emitting diode lasers'. Together they form a unique fingerprint.

Cite this