A comparison of S-passivation of III-V (001) surfaces using (NH                         4                         )                         2                         S                         x                          and S                         2                         Cl                         2

D. N. Gnoth; D. Wolfframm; A. Patchett; S. Hohenecker; D. R.T. Zahn; A. Leslie; I. T. McGovern; D. A. Evans

doi:10.1016/S0169-4332(97)00424-8

A comparison of S-passivation of III-V (001) surfaces using (NH ₄ ) ₂ S _x and S ₂ Cl ₂

D. N. Gnoth, D. Wolfframm, A. Patchett, S. Hohenecker, D. R.T. Zahn, A. Leslie, I. T. McGovern, D. A. Evans^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Soft X-ray photoelectron spectroscopy has been applied to compare the effect of two S-passivating etchants (S ₂ Cl ₂ and (NH ₄ ) ₂ S _x ) on the (001) surfaces of GaAs and InP. Detailed analysis of substrate and adsorbate core level emission peaks reveal the similar nature of S-III-V bonding in each case. Prior to in-situ annealing, the semiconductor surface is covered by an amorphous layer, and above around 400°C, a stable S-terminated surface is obtained in each case. Variations in the relative intensities of spectral features are more sensitive to process and temperature differences than to the etchants used. For S-terminated GaAs and InP surfaces, a high binding energy component is observed in the substrate Ga 3d and In 4d core level emission spectra corresponding to surface S-Ga(In) bonding. The S 2p core level spectra contain two components related to the surface and sub-surface S atoms. As-S bonding on the annealed GaAs-S surface is not present above 400°C.

Original language	English
Pages (from-to)	120-125
Number of pages	6
Journal	Applied Surface Science
Volume	123-124
DOIs	https://doi.org/10.1016/S0169-4332(97)00424-8
Publication status	Published - Jan 1998

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Gnoth, D. N., Wolfframm, D., Patchett, A., Hohenecker, S., Zahn, D. R. T., Leslie, A., McGovern, I. T., & Evans, D. A. (1998). A comparison of S-passivation of III-V (001) surfaces using (NH ₄ ) ₂ S _x and S ₂ Cl ₂. Applied Surface Science, 123-124, 120-125. https://doi.org/10.1016/S0169-4332(97)00424-8

Gnoth, D. N. ; Wolfframm, D. ; Patchett, A. et al. / A comparison of S-passivation of III-V (001) surfaces using (NH ₄ ) ₂ S _x and S ₂ Cl ₂. In: Applied Surface Science. 1998 ; Vol. 123-124. pp. 120-125.

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title = "A comparison of S-passivation of III-V (001) surfaces using (NH 4 ) 2 S x and S 2 Cl 2",

abstract = " Soft X-ray photoelectron spectroscopy has been applied to compare the effect of two S-passivating etchants (S 2 Cl 2 and (NH 4 ) 2 S x ) on the (001) surfaces of GaAs and InP. Detailed analysis of substrate and adsorbate core level emission peaks reveal the similar nature of S-III-V bonding in each case. Prior to in-situ annealing, the semiconductor surface is covered by an amorphous layer, and above around 400°C, a stable S-terminated surface is obtained in each case. Variations in the relative intensities of spectral features are more sensitive to process and temperature differences than to the etchants used. For S-terminated GaAs and InP surfaces, a high binding energy component is observed in the substrate Ga 3d and In 4d core level emission spectra corresponding to surface S-Ga(In) bonding. The S 2p core level spectra contain two components related to the surface and sub-surface S atoms. As-S bonding on the annealed GaAs-S surface is not present above 400°C.",

author = "Gnoth, {D. N.} and D. Wolfframm and A. Patchett and S. Hohenecker and Zahn, {D. R.T.} and A. Leslie and McGovern, {I. T.} and Evans, {D. A.}",

note = "Funding Information: The support of the EPRSC in providing access to the SRS is acknowledged as is the invaluable assistance of D. Teehan at line 6.1. A.A. Cafolla is thanked for allowing access to the data analysis software. This work was in part facilitated by the EU-HCM network, Chalcogen Modification of Semiconductor Interfaces. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "1998",

month = jan,

doi = "10.1016/S0169-4332(97)00424-8",

language = "English",

volume = "123-124",

pages = "120--125",

journal = "Applied Surface Science",

issn = "0169-4332",

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Gnoth, DN, Wolfframm, D, Patchett, A, Hohenecker, S, Zahn, DRT, Leslie, A, McGovern, IT & Evans, DA 1998, 'A comparison of S-passivation of III-V (001) surfaces using (NH ₄ ) ₂ S _x and S ₂ Cl ₂', Applied Surface Science, vol. 123-124, pp. 120-125. https://doi.org/10.1016/S0169-4332(97)00424-8

A comparison of S-passivation of III-V (001) surfaces using (NH ₄ ) ₂ S _x and S ₂ Cl ₂. / Gnoth, D. N.; Wolfframm, D.; Patchett, A. et al.
In: Applied Surface Science, Vol. 123-124, 01.1998, p. 120-125.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A comparison of S-passivation of III-V (001) surfaces using (NH 4 ) 2 S x and S 2 Cl 2

AU - Gnoth, D. N.

AU - Wolfframm, D.

AU - Patchett, A.

AU - Hohenecker, S.

AU - Zahn, D. R.T.

AU - Leslie, A.

AU - McGovern, I. T.

AU - Evans, D. A.

N1 - Funding Information: The support of the EPRSC in providing access to the SRS is acknowledged as is the invaluable assistance of D. Teehan at line 6.1. A.A. Cafolla is thanked for allowing access to the data analysis software. This work was in part facilitated by the EU-HCM network, Chalcogen Modification of Semiconductor Interfaces. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 1998/1

Y1 - 1998/1

N2 - Soft X-ray photoelectron spectroscopy has been applied to compare the effect of two S-passivating etchants (S 2 Cl 2 and (NH 4 ) 2 S x ) on the (001) surfaces of GaAs and InP. Detailed analysis of substrate and adsorbate core level emission peaks reveal the similar nature of S-III-V bonding in each case. Prior to in-situ annealing, the semiconductor surface is covered by an amorphous layer, and above around 400°C, a stable S-terminated surface is obtained in each case. Variations in the relative intensities of spectral features are more sensitive to process and temperature differences than to the etchants used. For S-terminated GaAs and InP surfaces, a high binding energy component is observed in the substrate Ga 3d and In 4d core level emission spectra corresponding to surface S-Ga(In) bonding. The S 2p core level spectra contain two components related to the surface and sub-surface S atoms. As-S bonding on the annealed GaAs-S surface is not present above 400°C.

AB - Soft X-ray photoelectron spectroscopy has been applied to compare the effect of two S-passivating etchants (S 2 Cl 2 and (NH 4 ) 2 S x ) on the (001) surfaces of GaAs and InP. Detailed analysis of substrate and adsorbate core level emission peaks reveal the similar nature of S-III-V bonding in each case. Prior to in-situ annealing, the semiconductor surface is covered by an amorphous layer, and above around 400°C, a stable S-terminated surface is obtained in each case. Variations in the relative intensities of spectral features are more sensitive to process and temperature differences than to the etchants used. For S-terminated GaAs and InP surfaces, a high binding energy component is observed in the substrate Ga 3d and In 4d core level emission spectra corresponding to surface S-Ga(In) bonding. The S 2p core level spectra contain two components related to the surface and sub-surface S atoms. As-S bonding on the annealed GaAs-S surface is not present above 400°C.

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U2 - 10.1016/S0169-4332(97)00424-8

DO - 10.1016/S0169-4332(97)00424-8

M3 - Article

AN - SCOPUS:18344400045

SN - 0169-4332

VL - 123-124

SP - 120

EP - 125

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Gnoth DN, Wolfframm D, Patchett A, Hohenecker S, Zahn DRT, Leslie A et al. A comparison of S-passivation of III-V (001) surfaces using (NH ₄ ) ₂ S _x and S ₂ Cl ₂. Applied Surface Science. 1998 Jan;123-124:120-125. doi: 10.1016/S0169-4332(97)00424-8

A comparison of S-passivation of III-V (001) surfaces using (NH ₄ ) ₂ S _x and S ₂ Cl ₂

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