A Simplified Method for Patterning Graphene on Dielectric Layers

  • Håkon I. Røst
  • , Benjamen P. Reed
  • , Frode S. Strand
  • , Joseph A. Durk
  • , D. Andrew Evans
  • , Antonija Grubišić-čabo
  • , Gary Wan
  • , Mattia Cattelan
  • , Mauricio J. Prieto
  • , Daniel M. Gottlob
  • , Liviu C. Tănase
  • , Lucas De Souza Caldas
  • , Thomas Schmidt
  • , Anton Tadich
  • , Bruce C. C. Cowie
  • , Rajesh Kumar Chellappan
  • , Justin W. Wells
  • , Simon P. Cooil

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)
240 Downloads (Pure)

Abstract

The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
Original languageEnglish
Pages (from-to)37510-37516
Number of pages7
JournalACS Applied Materials & Interfaces
Volume13
Issue number31
Early online date30 Jul 2021
DOIs
Publication statusPublished - 11 Aug 2021

Keywords

  • LEEM
  • NEXAFS
  • PEEM
  • electrical decoupling
  • graphene
  • patterned growth
  • photoelectron spectroscopy

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