Ag/GaAs(110) revisited: A photoemission study

D. A. Evans, K. Horn*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interfaces, is re-examined by means of high resolution valence and core level photo-emission. The origin of an adsorbate-induced new component on both Ga3d and As3d core level lines is discussed in terms of charge transfer between overlayer and substrate atoms, or an extra-atomic screening effect. The broadening of the Ag d-band is compared with the evolution and decreasing half width of the Fermi edge with Ag deposition at low substrate temperature. These observations are discussed in relation to the search for a criterion for the onset of metallicity in metal overlayers on semiconducting substrates.

Original languageEnglish
Pages (from-to)59-72
Number of pages14
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume62
Issue number1-2
DOIs
Publication statusPublished - Mar 1993

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