Ag/GaAs(110) revisited: A photoemission study

D. A. Evans; K. Horn

doi:10.1016/0368-2048(93)80006-8

Ag/GaAs(110) revisited: A photoemission study

D. A. Evans, K. Horn^*

^*Corresponding author for this work

Department of Physics

Fritz-Haber-Institute of the Max-Planck Society

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interfaces, is re-examined by means of high resolution valence and core level photo-emission. The origin of an adsorbate-induced new component on both Ga3d and As3d core level lines is discussed in terms of charge transfer between overlayer and substrate atoms, or an extra-atomic screening effect. The broadening of the Ag d-band is compared with the evolution and decreasing half width of the Fermi edge with Ag deposition at low substrate temperature. These observations are discussed in relation to the search for a criterion for the onset of metallicity in metal overlayers on semiconducting substrates.

Original language	English
Pages (from-to)	59-72
Number of pages	14
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	62
Issue number	1-2
DOIs	https://doi.org/10.1016/0368-2048(93)80006-8
Publication status	Published - Mar 1993

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abstract = "The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interfaces, is re-examined by means of high resolution valence and core level photo-emission. The origin of an adsorbate-induced new component on both Ga3d and As3d core level lines is discussed in terms of charge transfer between overlayer and substrate atoms, or an extra-atomic screening effect. The broadening of the Ag d-band is compared with the evolution and decreasing half width of the Fermi edge with Ag deposition at low substrate temperature. These observations are discussed in relation to the search for a criterion for the onset of metallicity in metal overlayers on semiconducting substrates.",

author = "Evans, {D. A.} and K. Horn",

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N2 - The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interfaces, is re-examined by means of high resolution valence and core level photo-emission. The origin of an adsorbate-induced new component on both Ga3d and As3d core level lines is discussed in terms of charge transfer between overlayer and substrate atoms, or an extra-atomic screening effect. The broadening of the Ag d-band is compared with the evolution and decreasing half width of the Fermi edge with Ag deposition at low substrate temperature. These observations are discussed in relation to the search for a criterion for the onset of metallicity in metal overlayers on semiconducting substrates.

AB - The Ag/GaAs(110) system, which serves as a model system for unreactive metal-semiconductor interfaces, is re-examined by means of high resolution valence and core level photo-emission. The origin of an adsorbate-induced new component on both Ga3d and As3d core level lines is discussed in terms of charge transfer between overlayer and substrate atoms, or an extra-atomic screening effect. The broadening of the Ag d-band is compared with the evolution and decreasing half width of the Fermi edge with Ag deposition at low substrate temperature. These observations are discussed in relation to the search for a criterion for the onset of metallicity in metal overlayers on semiconducting substrates.

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JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - 1-2

ER -

Ag/GaAs(110) revisited: A photoemission study

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