@inproceedings{14e35d4e40c54306a9c6cd37e8bbfeaa,
title = "Characterisation of CuAl alloy for future interconnect technologies",
abstract = "A copper-aluminium alloy (90:10wt%) has been investigated as a possible candidate for future interconnect applications. The tendency of the Al to segregate at the surface of the Cu following thermal anneal makes this alloy potentially suitable to function as a self-forming Cu diffusion barrier layer. X-ray photoelectron spectroscopy (XPS) and electrical characterisation measurements were used to study the segregation of Al from the alloy bulk during annealing treatments. Four point probe measurements were used to gain additional information as to the electrical resistance of the CuAl alloy when annealed at various temperatures in vacuum using pure Cu as a reference. Capacitance-voltage (CV), current-voltage (IV) and bias thermal stress (BTS) test measurements were made on metal-oxide-semiconductor (MOS) structures fabricated with the CuAl alloy and compared to identical structures with pure Cu and Al contacts.",
keywords = "Annealing, Capacitance, Capacitance-voltage characteristics, Copper, Silicon, Stress",
author = "C. Byrne and McCoy, {A. P.} and J. Bogan and A. Brady and G. Hughes",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 ; Conference date: 18-05-2015 Through 21-05-2015",
year = "2015",
month = nov,
day = "10",
doi = "10.1109/IITC-MAM.2015.7325644",
language = "English",
series = "2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015",
publisher = "IEEE Press",
pages = "111--113",
booktitle = "2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015",
address = "United States of America",
}