Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

C. Byrne; A. Brady; L. Walsh; A. P. McCoy; J. Bogan; E. McGlynn; K. V. Rajani; G. Hughes

doi:10.1016/j.tsf.2015.12.056

Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

C. Byrne^*, A. Brady, L. Walsh, A. P. McCoy, J. Bogan, E. McGlynn, K. V. Rajani, G. Hughes

^*Corresponding author for this work

Dublin City University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A copper-aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO₂/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO₂ interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk.

Original language	English
Pages (from-to)	59-63
Number of pages	5
Journal	Thin Solid Films
Volume	599
DOIs	https://doi.org/10.1016/j.tsf.2015.12.056
Publication status	Published - 29 Jan 2016
Externally published	Yes

Keywords

Aluminium
Copper
CuAl alloy
Self-forming barrier
XPS
XRD

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title = "Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90\%:10\% wt) with thermal anneal",

abstract = "A copper-aluminium (CuAl) alloy (90\%:10\% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO2/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO2 interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk.",

keywords = "Aluminium, Copper, CuAl alloy, Self-forming barrier, XPS, XRD",

author = "C. Byrne and A. Brady and L. Walsh and McCoy, \{A. P.\} and J. Bogan and E. McGlynn and Rajani, \{K. V.\} and G. Hughes",

note = "Funding Information: Conor Byrne acknowledges financial support under the Irish Research Council Enterprise Partnership Scheme ( EPSPG/2012/335 ) in partnership with Intel Ireland . The authors also acknowledge financial support from the Science Foundation Ireland TIDA award 13/TIDA/I2735 and the SFI PI award 13/IA/1955 . MOS structure fabrication was performed under the National Access Program, NAP Project 422, in the Tyndall National Institute, Cork. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2016",

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doi = "10.1016/j.tsf.2015.12.056",

language = "English",

volume = "599",

pages = "59--63",

journal = "Thin Solid Films",

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T1 - Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

AU - Byrne, C.

AU - Brady, A.

AU - Walsh, L.

AU - McCoy, A. P.

AU - Bogan, J.

AU - McGlynn, E.

AU - Rajani, K. V.

AU - Hughes, G.

N1 - Funding Information: Conor Byrne acknowledges financial support under the Irish Research Council Enterprise Partnership Scheme ( EPSPG/2012/335 ) in partnership with Intel Ireland . The authors also acknowledge financial support from the Science Foundation Ireland TIDA award 13/TIDA/I2735 and the SFI PI award 13/IA/1955 . MOS structure fabrication was performed under the National Access Program, NAP Project 422, in the Tyndall National Institute, Cork. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2016/1/29

Y1 - 2016/1/29

N2 - A copper-aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO2/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO2 interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk.

AB - A copper-aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO2/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO2 interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk.

KW - Aluminium

KW - Copper

KW - CuAl alloy

KW - Self-forming barrier

KW - XPS

KW - XRD

UR - https://www.scopus.com/pages/publications/84959017399

U2 - 10.1016/j.tsf.2015.12.056

DO - 10.1016/j.tsf.2015.12.056

M3 - Article

AN - SCOPUS:84959017399

SN - 0040-6090

VL - 599

SP - 59

EP - 63

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

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Keywords

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