Core level analysis of the K/GaP(110) interface

S. D'Addato; P. Bailey; J. M.C. Thornton; D. A. Evans

doi:10.1016/S0039-6028(96)01363-5

Core level analysis of the K/GaP(110) interface

S. D'Addato^*, P. Bailey, J. M.C. Thornton, D. A. Evans

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T = 120 K are presented for the first time. The analysis shows a big core level shift at lower binding energies (ΔE = 1.6 eV at a coverage Θ = 0.1 ML) for the P2p core level spectra. We interpret this result in terms of a charge redistribution affecting both types of atoms of the first substrate layer, suggesting some differences from the intuitive picture of strong ionic localised bonding between the alkali and the surface Ga atom.

Original language	English
Pages (from-to)	233-237
Number of pages	5
Journal	Surface Science
Volume	377-379
DOIs	https://doi.org/10.1016/S0039-6028(96)01363-5
Publication status	Published - 20 Apr 1997

Keywords

Alkali metal
Metal-semiconductor interface
Photoelectron spectroscopy

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title = "Core level analysis of the K/GaP(110) interface",

abstract = "The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T = 120 K are presented for the first time. The analysis shows a big core level shift at lower binding energies (ΔE = 1.6 eV at a coverage Θ = 0.1 ML) for the P2p core level spectra. We interpret this result in terms of a charge redistribution affecting both types of atoms of the first substrate layer, suggesting some differences from the intuitive picture of strong ionic localised bonding between the alkali and the surface Ga atom.",

keywords = "Alkali metal, Metal-semiconductor interface, Photoelectron spectroscopy",

author = "S. D'Addato and P. Bailey and Thornton, {J. M.C.} and Evans, {D. A.}",

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doi = "10.1016/S0039-6028(96)01363-5",

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TY - JOUR

T1 - Core level analysis of the K/GaP(110) interface

AU - D'Addato, S.

AU - Bailey, P.

AU - Thornton, J. M.C.

AU - Evans, D. A.

PY - 1997/4/20

Y1 - 1997/4/20

N2 - The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T = 120 K are presented for the first time. The analysis shows a big core level shift at lower binding energies (ΔE = 1.6 eV at a coverage Θ = 0.1 ML) for the P2p core level spectra. We interpret this result in terms of a charge redistribution affecting both types of atoms of the first substrate layer, suggesting some differences from the intuitive picture of strong ionic localised bonding between the alkali and the surface Ga atom.

AB - The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T = 120 K are presented for the first time. The analysis shows a big core level shift at lower binding energies (ΔE = 1.6 eV at a coverage Θ = 0.1 ML) for the P2p core level spectra. We interpret this result in terms of a charge redistribution affecting both types of atoms of the first substrate layer, suggesting some differences from the intuitive picture of strong ionic localised bonding between the alkali and the surface Ga atom.

KW - Alkali metal

KW - Metal-semiconductor interface

KW - Photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0031117501&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(96)01363-5

DO - 10.1016/S0039-6028(96)01363-5

M3 - Article

AN - SCOPUS:0031117501

SN - 0039-6028

VL - 377-379

SP - 233

EP - 237

JO - Surface Science

JF - Surface Science

ER -

Core level analysis of the K/GaP(110) interface

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Keywords

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