Core level analysis of the K/GaP(110) interface

S. D'Addato*, P. Bailey, J. M.C. Thornton, D. A. Evans

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T = 120 K are presented for the first time. The analysis shows a big core level shift at lower binding energies (ΔE = 1.6 eV at a coverage Θ = 0.1 ML) for the P2p core level spectra. We interpret this result in terms of a charge redistribution affecting both types of atoms of the first substrate layer, suggesting some differences from the intuitive picture of strong ionic localised bonding between the alkali and the surface Ga atom.

Original languageEnglish
Pages (from-to)233-237
Number of pages5
JournalSurface Science
Publication statusPublished - 20 Apr 1997


  • Alkali metal
  • Metal-semiconductor interface
  • Photoelectron spectroscopy


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