Current-voltage characteristics of Na/p-GaP(110) Schottky diodes

M. Von Der Emde; D. R.T. Zahn; Ch Schultz; D. A. Evans; K. Horn

doi:10.1063/1.352183

Current-voltage characteristics of Na/p-GaP(110) Schottky diodes

M. Von Der Emde^*, D. R.T. Zahn, Ch Schultz, D. A. Evans, K. Horn

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The Schottky barrier of Na deposited onto ultrahigh vacuum cleaved p-type GaP has been determined by in situ current-voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).

Original language	English
Pages (from-to)	4486-4487
Number of pages	2
Journal	Journal of Applied Physics
Volume	72
Issue number	9
DOIs	https://doi.org/10.1063/1.352183
Publication status	Published - 1992

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@article{05044d05bb854e37964456ffdb6bfba6,

title = "Current-voltage characteristics of Na/p-GaP(110) Schottky diodes",

abstract = "The Schottky barrier of Na deposited onto ultrahigh vacuum cleaved p-type GaP has been determined by in situ current-voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).",

author = "Emde, {M. Von Der} and Zahn, {D. R.T.} and Ch Schultz and Evans, {D. A.} and K. Horn",

year = "1992",

doi = "10.1063/1.352183",

language = "English",

volume = "72",

pages = "4486--4487",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Current-voltage characteristics of Na/p-GaP(110) Schottky diodes

AU - Emde, M. Von Der

AU - Zahn, D. R.T.

AU - Schultz, Ch

AU - Evans, D. A.

AU - Horn, K.

PY - 1992

Y1 - 1992

N2 - The Schottky barrier of Na deposited onto ultrahigh vacuum cleaved p-type GaP has been determined by in situ current-voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).

AB - The Schottky barrier of Na deposited onto ultrahigh vacuum cleaved p-type GaP has been determined by in situ current-voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).

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U2 - 10.1063/1.352183

DO - 10.1063/1.352183

M3 - Article

AN - SCOPUS:36449001369

SN - 0021-8979

VL - 72

SP - 4486

EP - 4487

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Current-voltage characteristics of Na/p-GaP(110) Schottky diodes

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