Current-voltage characteristics of Na/p-GaP(110) Schottky diodes

M. Von Der Emde*, D. R.T. Zahn, Ch Schultz, D. A. Evans, K. Horn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The Schottky barrier of Na deposited onto ultrahigh vacuum cleaved p-type GaP has been determined by in situ current-voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).

Original languageEnglish
Pages (from-to)4486-4487
Number of pages2
JournalJournal of Applied Physics
Volume72
Issue number9
DOIs
Publication statusPublished - 1992

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