Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

C. E. Finlayson; A. Amezcua-Correa; P. J.A. Sazio; N. F. Baril; J. V. Badding

doi:10.1063/1.2713755

Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

C. E. Finlayson^*, A. Amezcua-Correa, P. J.A. Sazio, N. F. Baril, J. V. Badding

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.

Original language	English
Article number	132110
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	13
DOIs	https://doi.org/10.1063/1.2713755
Publication status	Published - 27 Mar 2007
Externally published	Yes

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@article{bae728139a8849d7a6589118fd6b99ed,

title = "Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers",

abstract = "Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.",

author = "Finlayson, {C. E.} and A. Amezcua-Correa and Sazio, {P. J.A.} and Baril, {N. F.} and Badding, {J. V.}",

note = "Funding Information: One of the authors (J.V.B.) acknowledges support from the National Science Foundation (Grant No. DMR-0502906), the Penn State Center for Nanoscale Science, funded by NSF Grant No. DMR-0213623, and the Penn State-Lehigh Center for Optical Technologies. Another author (P.J.A.S.) acknowledges the Engineering and Physical Sciences Research Council for support. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2007",

month = mar,

day = "27",

doi = "10.1063/1.2713755",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

AU - Finlayson, C. E.

AU - Amezcua-Correa, A.

AU - Sazio, P. J.A.

AU - Baril, N. F.

AU - Badding, J. V.

N1 - Funding Information: One of the authors (J.V.B.) acknowledges support from the National Science Foundation (Grant No. DMR-0502906), the Penn State Center for Nanoscale Science, funded by NSF Grant No. DMR-0213623, and the Penn State-Lehigh Center for Optical Technologies. Another author (P.J.A.S.) acknowledges the Engineering and Physical Sciences Research Council for support. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2007/3/27

Y1 - 2007/3/27

N2 - Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.

AB - Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.

UR - http://www.scopus.com/inward/record.url?scp=34047098371&partnerID=8YFLogxK

U2 - 10.1063/1.2713755

DO - 10.1063/1.2713755

M3 - Article

AN - SCOPUS:34047098371

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132110

ER -

Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

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