Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts

M. von der Emde; D. R.T. Zahn; Ch Schultz; D. A. Evans; K. Horn

doi:10.1016/0169-4332(93)90570-2

Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts

M. von der Emde^*, D. R.T. Zahn, Ch Schultz, D. A. Evans, K. Horn

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electrical transport measurements, in order to clarify the dependence of Schottky barrier height on metal and interface properties. Metals were deposited onto clean cleaved GaP(110) in ultrahigh vacuum and the temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were recorded in situ. The Schottky barriers (F{cyrillic}_B) were determined for nine metals (Na, Mg, In, Ti, Sn, Sb, Ag, Au and Pt), covering a wide range of metal work function (F{cyrillic}_M) from 2.75 to 5.65 eV. The results reveal a weak dependence of F{cyrillic}_B on F{cyrillic}_M with S=dF{cyrillic}_B/dF{cyrillic}_M ≈ 0.14, which is consistent with a strong Fermi level pinning by induced gap states.

Original language	English
Pages (from-to)	507-510
Number of pages	4
Journal	Applied Surface Science
Volume	70-71
Issue number	Part 2
DOIs	https://doi.org/10.1016/0169-4332(93)90570-2
Publication status	Published - 02 Jun 1993

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title = "Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts",

abstract = "Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electrical transport measurements, in order to clarify the dependence of Schottky barrier height on metal and interface properties. Metals were deposited onto clean cleaved GaP(110) in ultrahigh vacuum and the temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were recorded in situ. The Schottky barriers (F{cyrillic}B) were determined for nine metals (Na, Mg, In, Ti, Sn, Sb, Ag, Au and Pt), covering a wide range of metal work function (F{cyrillic}M) from 2.75 to 5.65 eV. The results reveal a weak dependence of F{cyrillic}B on F{cyrillic}M with S=dF{cyrillic}B/dF{cyrillic}M ≈ 0.14, which is consistent with a strong Fermi level pinning by induced gap states.",

author = "{von der Emde}, M. and Zahn, {D. R.T.} and Ch Schultz and Evans, {D. A.} and K. Horn",

year = "1993",

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doi = "10.1016/0169-4332(93)90570-2",

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T1 - Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts

AU - von der Emde, M.

AU - Zahn, D. R.T.

AU - Schultz, Ch

AU - Evans, D. A.

AU - Horn, K.

PY - 1993/6/2

Y1 - 1993/6/2

N2 - Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electrical transport measurements, in order to clarify the dependence of Schottky barrier height on metal and interface properties. Metals were deposited onto clean cleaved GaP(110) in ultrahigh vacuum and the temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were recorded in situ. The Schottky barriers (F{cyrillic}B) were determined for nine metals (Na, Mg, In, Ti, Sn, Sb, Ag, Au and Pt), covering a wide range of metal work function (F{cyrillic}M) from 2.75 to 5.65 eV. The results reveal a weak dependence of F{cyrillic}B on F{cyrillic}M with S=dF{cyrillic}B/dF{cyrillic}M ≈ 0.14, which is consistent with a strong Fermi level pinning by induced gap states.

AB - Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electrical transport measurements, in order to clarify the dependence of Schottky barrier height on metal and interface properties. Metals were deposited onto clean cleaved GaP(110) in ultrahigh vacuum and the temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were recorded in situ. The Schottky barriers (F{cyrillic}B) were determined for nine metals (Na, Mg, In, Ti, Sn, Sb, Ag, Au and Pt), covering a wide range of metal work function (F{cyrillic}M) from 2.75 to 5.65 eV. The results reveal a weak dependence of F{cyrillic}B on F{cyrillic}M with S=dF{cyrillic}B/dF{cyrillic}M ≈ 0.14, which is consistent with a strong Fermi level pinning by induced gap states.

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U2 - 10.1016/0169-4332(93)90570-2

DO - 10.1016/0169-4332(93)90570-2

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SN - 0169-4332

VL - 70-71

SP - 507

EP - 510

JO - Applied Surface Science

JF - Applied Surface Science

IS - Part 2

ER -

Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts

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