Gold and silver Schottky barriers on ZnS(110)

D. Wolfframm*, D. A. Evans, G. Neuhold, K. Horn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (SciVal)

Abstract

The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φBAg=2.19 and φBAg= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.

Original languageEnglish
Pages (from-to)3905-3911
Number of pages7
JournalJournal of Applied Physics
Volume87
Issue number8
DOIs
Publication statusPublished - 15 Apr 2000

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