Gold and silver Schottky barriers on ZnS(110)

D. Wolfframm; D. A. Evans; G. Neuhold; K. Horn

doi:10.1063/1.372433

Gold and silver Schottky barriers on ZnS(110)

D. Wolfframm^*
, D. A. Evans
, G. Neuhold
, K. Horn

^*Corresponding author for this work

Department of Physics

Brandenburgische TU
Prifysgol Aberystwyth | Aberystwyth University
Fritz Haber Institute of the Max Planck Society

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φ_B^Ag=2.19 and φ_B^Ag= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.

Original language	English
Pages (from-to)	3905-3911
Number of pages	7
Journal	Journal of Applied Physics
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.372433
Publication status	Published - 15 Apr 2000

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title = "Gold and silver Schottky barriers on ZnS(110)",

abstract = "The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φBAg=2.19 and φBAg= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.",

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T1 - Gold and silver Schottky barriers on ZnS(110)

AU - Wolfframm, D.

AU - Evans, D. A.

AU - Neuhold, G.

AU - Horn, K.

PY - 2000/4/15

Y1 - 2000/4/15

N2 - The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φBAg=2.19 and φBAg= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.

AB - The evolution of the Schottky barrier between Au and Ag metal films and ZnS(1107) has been studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at higher depositions. The Schottky barrier heights were found to be φBAg=2.19 and φBAg= 1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with predictions of Schottky barrier heights based on the concept of metal-induced gap states and the influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.

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U2 - 10.1063/1.372433

DO - 10.1063/1.372433

M3 - Article

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SN - 0021-8979

VL - 87

SP - 3905

EP - 3911

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Gold and silver Schottky barriers on ZnS(110)

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