Growth and morphology of SnPc films on the S-GaAs(0 0 1) surface: A combined XPS, AFM and NEXAFS study

Alex Raymond Vearey-Roberts, H. J. Steiner, Stephen Evans, I. Cerrillo, J. Mendez, G. Cabailh, S. O'Brien, J.w. Wells, I. T. McGovern, D. Andrew Evans

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

The morphology and molecular ordering of the organic semiconductor tin phthalocyanine (SnPc) on the sulphur-terminated GaAs(0 0 1) surface have been monitored by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and near-edge X-ray absorption fine structure (NEXAFS). XPS measurements using synchrotron radiation reveal weak interfacial bonding between the organic molecules and the inorganic semiconductor substrate. The attenuation of XPS core-level peak intensities with increasing organic film thickness suggests a Stranski-Krastanov growth mode, and an island morphology is confirmed by AFM. Although the SnPc clusters do not have specific crystalline facets, NEXAFS spectra show an angle dependence consistent with a molecular orientation close to the surface plane, within the clusters.
Original languageEnglish
Pages (from-to)131-137
Number of pages7
JournalApplied Surface Science
Volume234
Issue number1-4
Early online date06 Jul 2004
DOIs
Publication statusPublished - 15 Jul 2004

Keywords

  • Growth
  • Morphology
  • SnPc films

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