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A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700K, while the clean (21) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.260.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (21) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300K and 1200K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.
|Number of pages||4|
|Journal||Applied Physics Letters|
|Publication status||Published - 13 Aug 2014|
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- Faculty of Business and Physcial Sciences, Department of Physics - Professor, Head of Department (Physics)
Person: Teaching And Research, Other
- Faculty of Business and Physcial Sciences, Department of Physics - Senior Lecturer
Person: Teaching And Research
- 1 Finished
Photoelectron Spectroscopy and Microscopy using Synchrotron Radiation for Exploiting Diamond surfaces and Interfaces
Engineering and Physical Sciences Research Council
01 Oct 2009 → 30 Sept 2013
Project: Externally funded research