Interface chemistry and band bending induced by Pt deposition onto GaP(110)

Th Chassé; W. Theis; T. P. Chen; D. A. Evans; K. Horn; C. Pettenkofer; W. Jaegermann

doi:10.1016/0039-6028(91)91037-X

Interface chemistry and band bending induced by Pt deposition onto GaP(110)

Th Chassé^*, W. Theis, T. P. Chen, D. A. Evans, K. Horn, C. Pettenkofer, W. Jaegermann

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron radiation. The results are characteristic of a reactive interface, where the GaP substrate is disrupted by the deposited platinum layer resulting in an increasing reacted Ga emission and a strong attenuation of the substrate Ga emission. The detailed analysis of band bending shows that Pt, being a high work-function material, nevertheless has a final pinning position which is close to that of other materials. The value for the Schottky barrier inferred from the photoemission data, Φ_bⁿ is 1.56 eV. We observe a distortion of the equilibrium band arrangement by the incident photons, giving rise to a surface photovoltage even at room temperature. This effect can strongly influence the determination of surface band bending.

Original language	English
Pages (from-to)	472-477
Number of pages	6
Journal	Surface Science
Volume	251-252
Issue number	C
DOIs	https://doi.org/10.1016/0039-6028(91)91037-X
Publication status	Published - 01 Jul 1991

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title = "Interface chemistry and band bending induced by Pt deposition onto GaP(110)",

abstract = "The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron radiation. The results are characteristic of a reactive interface, where the GaP substrate is disrupted by the deposited platinum layer resulting in an increasing reacted Ga emission and a strong attenuation of the substrate Ga emission. The detailed analysis of band bending shows that Pt, being a high work-function material, nevertheless has a final pinning position which is close to that of other materials. The value for the Schottky barrier inferred from the photoemission data, Φbn is 1.56 eV. We observe a distortion of the equilibrium band arrangement by the incident photons, giving rise to a surface photovoltage even at room temperature. This effect can strongly influence the determination of surface band bending.",

author = "Th Chass{\'e} and W. Theis and Chen, \{T. P.\} and Evans, \{D. A.\} and K. Horn and C. Pettenkofer and W. Jaegermann",

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doi = "10.1016/0039-6028(91)91037-X",

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T1 - Interface chemistry and band bending induced by Pt deposition onto GaP(110)

AU - Chassé, Th

AU - Theis, W.

AU - Chen, T. P.

AU - Evans, D. A.

AU - Horn, K.

AU - Pettenkofer, C.

AU - Jaegermann, W.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron radiation. The results are characteristic of a reactive interface, where the GaP substrate is disrupted by the deposited platinum layer resulting in an increasing reacted Ga emission and a strong attenuation of the substrate Ga emission. The detailed analysis of band bending shows that Pt, being a high work-function material, nevertheless has a final pinning position which is close to that of other materials. The value for the Schottky barrier inferred from the photoemission data, Φbn is 1.56 eV. We observe a distortion of the equilibrium band arrangement by the incident photons, giving rise to a surface photovoltage even at room temperature. This effect can strongly influence the determination of surface band bending.

AB - The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron radiation. The results are characteristic of a reactive interface, where the GaP substrate is disrupted by the deposited platinum layer resulting in an increasing reacted Ga emission and a strong attenuation of the substrate Ga emission. The detailed analysis of band bending shows that Pt, being a high work-function material, nevertheless has a final pinning position which is close to that of other materials. The value for the Schottky barrier inferred from the photoemission data, Φbn is 1.56 eV. We observe a distortion of the equilibrium band arrangement by the incident photons, giving rise to a surface photovoltage even at room temperature. This effect can strongly influence the determination of surface band bending.

UR - https://www.scopus.com/pages/publications/0026187536

U2 - 10.1016/0039-6028(91)91037-X

DO - 10.1016/0039-6028(91)91037-X

M3 - Article

AN - SCOPUS:0026187536

SN - 0039-6028

VL - 251-252

SP - 472

EP - 477

JO - Surface Science

JF - Surface Science

IS - C

ER -

Interface chemistry and band bending induced by Pt deposition onto GaP(110)

Abstract

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