Interpretation of reflectance anisotropy spectroscopy spectra of ZnSe(001) grown on GaAs(001) in terms of bulk, interface, and surface contributions

A. M. Frisch*, Ch Schultz, T. Herrmann, V. Emiliani, D. Wolfframm, D. A. Evans, M. Korn, U. Rossow, N. Esser, W. Richter

*Corresponding author for this work

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1 Citation (SciVal)

Abstract

We combine reflectance anisotropy spectroscopy (RAS) with low energy electron diffraction, Auger electron spectroscopy, and soft x-ray photoemission spectra to analyze the surface optical anisotropy of ZnSe(OOl). Clean surfaces were prepared by thermal desorption of a protective Se cap from ZnSe layers of different thicknesses grown by molecular beam epitaxy on GaAs(001). Two surface reconstructions have been prepared by subsequent annealing, the Se-rich (2×1) reconstruction and the Zn-rich c(2×2) reconstruction. By modifying the surfaces either through submonolayer deposition of Sb or a short exposure to atmosphere it was possible to distinguish between surface and bulk/interface contributions to the optical anisotropy. Only on disordered, very Se-rich ZnSe(001) surfaces prepared at low annealing temperatures RAS features possibly related to electronic surface states are found. RAS spectra of the (2×1) and the c(2×2) surfaces are correlated with surface morphology and ordering rather than surface reconstruction and show features near the critical points of the bulk ZnSe band structure.

Original languageEnglish
Pages (from-to)2350-2354
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
DOIs
Publication statusPublished - 1998

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