Iron-mediated growth of epitaxial graphene on SiC and diamond

S. P. Cooil, F. Song, G. T. Williams, O. R. Roberts, D. P. Langstaff, B. Jørgensen, K. Høydalsvik, D. W. Breiby, E. Wahlström, D. A. Evans, J. W. Wells

Research output: Contribution to journalArticlepeer-review

36 Citations (SciVal)

Abstract

Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp3 to sp2 carbon. In comparison with the bare SiC (0 0 0 1) surface, the graphitization temperature is reduced from over 1000 °C to 600 °C and for diamond (1 1 1), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures.
Original languageEnglish
Pages (from-to)5099-5105
JournalCarbon
Volume50
Issue number14
DOIs
Publication statusPublished - 01 Nov 2012

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