Mobility of indium on the ZnO(0001) surface

R. Heinhold; R. J. Reeves; G. T. Williams; D. A. Evans; M. W. Allen

doi:10.1063/1.4906868

Mobility of indium on the ZnO(0001) surface

R. Heinhold^*, R. J. Reeves, G. T. Williams, D. A. Evans, M. W. Allen

^*Corresponding author for this work

Department of Physics

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Abstract

The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at similar to 520 degrees C, with indium migrating from the (000 (1) over bar) underside of the wafer, around the non-polar (1 (1) over bar 00) and (11 (2) over bar0) sidewalls, to form a uniform self-organized (similar to 20 angstrom) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In2O3 precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates. (C) 2015 AIP Publishing LLC.

Original language	English
Article number	051606
Number of pages	5
Journal	Applied Physics Letters
Volume	106
Issue number	5
DOIs	https://doi.org/10.1063/1.4906868
Publication status	Published - 02 Feb 2015

Keywords

MOLECULAR-BEAM EPITAXY
ZNO
GAN
GROWTH
DEPOSITION
ADLAYER

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title = "Mobility of indium on the ZnO(0001) surface",

abstract = "The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at similar to 520 degrees C, with indium migrating from the (000 (1) over bar) underside of the wafer, around the non-polar (1 (1) over bar 00) and (11 (2) over bar0) sidewalls, to form a uniform self-organized (similar to 20 angstrom) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In2O3 precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates. (C) 2015 AIP Publishing LLC.",

keywords = "MOLECULAR-BEAM EPITAXY, ZNO, GAN, GROWTH, DEPOSITION, ADLAYER",

author = "R. Heinhold and Reeves, {R. J.} and Williams, {G. T.} and Evans, {D. A.} and Allen, {M. W.}",

year = "2015",

month = feb,

day = "2",

doi = "10.1063/1.4906868",

language = "English",

volume = "106",

journal = "Applied Physics Letters",

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T1 - Mobility of indium on the ZnO(0001) surface

AU - Heinhold, R.

AU - Reeves, R. J.

AU - Williams, G. T.

AU - Evans, D. A.

AU - Allen, M. W.

PY - 2015/2/2

Y1 - 2015/2/2

N2 - The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at similar to 520 degrees C, with indium migrating from the (000 (1) over bar) underside of the wafer, around the non-polar (1 (1) over bar 00) and (11 (2) over bar0) sidewalls, to form a uniform self-organized (similar to 20 angstrom) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In2O3 precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates. (C) 2015 AIP Publishing LLC.

AB - The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at similar to 520 degrees C, with indium migrating from the (000 (1) over bar) underside of the wafer, around the non-polar (1 (1) over bar 00) and (11 (2) over bar0) sidewalls, to form a uniform self-organized (similar to 20 angstrom) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In2O3 precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates. (C) 2015 AIP Publishing LLC.

KW - MOLECULAR-BEAM EPITAXY

KW - ZNO

KW - GAN

KW - GROWTH

KW - DEPOSITION

KW - ADLAYER

UR - http://hdl.handle.net/2160/27790

U2 - 10.1063/1.4906868

DO - 10.1063/1.4906868

M3 - Article

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051606

ER -

Mobility of indium on the ZnO(0001) surface

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Andrew Evans

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Mobility of indium on the ZnO(0001) surface

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Andrew Evans

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