Modification of GaAs Schottky diodes by thin organic interlayers

D. A. Evans; Alex Raymond Vearey-Roberts

doi:10.1063/1.1864255

Modification of GaAs Schottky diodes by thin organic interlayers

D. A. Evans, Alex Raymond Vearey-Roberts

Department of Physics

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Abstract

Control of the interfacial potential barrier for metal / n- GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The current–voltage (I-V) characteristics for organic-modified Ag / S : GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n < 1.3⁠). Unlike other organic interlayers in similar device structures, SnPc reduces the effective barrier height by influencing the space charge region of the GaAs. The change in barrier height deduced from the I-V characteristics [(0.26 ± 0.02) V] is similar to the band-bending measured using core-level photoelectron spectroscopy for SnPc growth on the S-passivated n - GaAs (001) surface [(0.22 ± 0.04) eV] and is much larger than previously reported for other similar systems.

Original language	English
Article number	072105
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	7
DOIs	https://doi.org/10.1063/1.1864255
Publication status	Published - 14 Feb 2005

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title = "Modification of GaAs Schottky diodes by thin organic interlayers",

abstract = "Control of the interfacial potential barrier for metal / n- GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The current–voltage (I-V) characteristics for organic-modified Ag / S : GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n < 1.3⁠). Unlike other organic interlayers in similar device structures, SnPc reduces the effective barrier height by influencing the space charge region of the GaAs. The change in barrier height deduced from the I-V characteristics [(0.26 ± 0.02) V] is similar to the band-bending measured using core-level photoelectron spectroscopy for SnPc growth on the S-passivated n - GaAs (001) surface [(0.22 ± 0.04) eV] and is much larger than previously reported for other similar systems.",

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N2 - Control of the interfacial potential barrier for metal / n- GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The current–voltage (I-V) characteristics for organic-modified Ag / S : GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n < 1.3⁠). Unlike other organic interlayers in similar device structures, SnPc reduces the effective barrier height by influencing the space charge region of the GaAs. The change in barrier height deduced from the I-V characteristics [(0.26 ± 0.02) V] is similar to the band-bending measured using core-level photoelectron spectroscopy for SnPc growth on the S-passivated n - GaAs (001) surface [(0.22 ± 0.04) eV] and is much larger than previously reported for other similar systems.

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Modification of GaAs Schottky diodes by thin organic interlayers

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