Modification of GaAs Schottky diodes by thin organic interlayers

Andrew Evans; Alex Raymond Vearey-Roberts

doi:10.1063/1.1864255

Modification of GaAs Schottky diodes by thin organic interlayers

Andrew Evans, Alex Raymond Vearey-Roberts

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Abstract

Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n

Original language	English
Journal	Applied Physics Letters
Volume	86
Issue number	7
DOIs	https://doi.org/10.1063/1.1864255
Publication status	Published - 10 Feb 2005

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abstract = "Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n",

author = "Andrew Evans and Vearey-Roberts, {Alex Raymond}",

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AB - Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n

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Modification of GaAs Schottky diodes by thin organic interlayers

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