Modification of GaAs Schottky diodes by thin organic interlayers

Andrew Evans, Alex Raymond Vearey-Roberts

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Abstract

Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n
Original languageEnglish
JournalApplied Physics Letters
Volume86
Issue number7
DOIs
Publication statusPublished - 10 Feb 2005

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