On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers

A. Brady-Boyd, R. O'Connor, S. Armini, V. Selvaraju, G. Hughes, J. Bogan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (SciVal)

Abstract

In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction of metallic manganese with a (3-trimethoxysilylpropyl)diethylenetriamine (DETA) self-assembled monolayer (SAM) on SiO 2 and non-porous low-k dielectric materials. Subsequent deposition of a ∼0.5 nm thick Mn, followed by a 200 °C anneal results in the Mn diffusing through the SAM to interact with the underlying SiO 2 layer to form a Mn-silicate layer. Furthermore, there is evidence that the Mn interacts with the carbon and nitrogen within the SAM to form Mn-carbide and Mn-nitride, respectively. When deposited on low-k materials the Mn is found to diffuse through to the SAM on deposition and interact both with the SAM and the underlying substrate in a similar fashion.

Original languageEnglish
Pages (from-to)260-266
Number of pages7
JournalApplied Surface Science
Volume427
DOIs
Publication statusPublished - 01 Jan 2018
Externally publishedYes

Keywords

  • Interconnects
  • Low-k dielectric
  • Manganese silicate
  • Self-assembled monolayers
  • XPS

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