Perylenes and phthalocyanines on GaAs(0 0 1) surfaces

D. A. Evans; H. J. Steiner; A. R. Vearey-Roberts; V. Dhanak; G. Cabailh; S. O'Brien; I. T. McGovern; W. Braun; T. U. Kampen; S. Park; D. R.T. Zahn

doi:10.1016/S0169-4332(03)00467-7

Perylenes and phthalocyanines on GaAs(0 0 1) surfaces

D. A. Evans^*, H. J. Steiner, A. R. Vearey-Roberts, V. Dhanak, G. Cabailh, S. O'Brien, I. T. McGovern, W. Braun, T. U. Kampen, S. Park, D. R.T. Zahn

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The growth of perylenes and phthalocyanines on chalcogen-passivated (0 0 1) surfaces of GaAs has been studied using photoelectron spectroscopy. 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) and copper phthalocyanine (CuPc) form abrupt interfaces without the formation of new covalent/ionic bonds. The substrate core levels are narrowed by PTCDA adsorption and broadened by CuPc adsorption. PTCDA molecules adsorb predominantly at defect sites removing inhomogeneous Fermi level pinning. CuPc adsorption on the S-terminated GaAs(0 0 1) surface generates new states within the GaAs band gap and this causes the substrate Fermi level to shift relative to the band edges. The formation of an interface dipole is inferred for interfaces involving both PTCDA and CuPc. The S-GaAs-PTCDA heterojunction has a straddled energy band profile whereas that of the S-GaAs-CuPc heterojunction is staggered.

Original language	English
Pages (from-to)	417-422
Number of pages	6
Journal	Applied Surface Science
Volume	212-213
Issue number	SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00467-7
Publication status	Published - 15 May 2003

Keywords

CuPc
GaAs
Interfaces
Photoemission
PTCDA

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@article{32d86d1ffcb6428cb91d65684819a59b,

title = "Perylenes and phthalocyanines on GaAs(0 0 1) surfaces",

abstract = "The growth of perylenes and phthalocyanines on chalcogen-passivated (0 0 1) surfaces of GaAs has been studied using photoelectron spectroscopy. 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) and copper phthalocyanine (CuPc) form abrupt interfaces without the formation of new covalent/ionic bonds. The substrate core levels are narrowed by PTCDA adsorption and broadened by CuPc adsorption. PTCDA molecules adsorb predominantly at defect sites removing inhomogeneous Fermi level pinning. CuPc adsorption on the S-terminated GaAs(0 0 1) surface generates new states within the GaAs band gap and this causes the substrate Fermi level to shift relative to the band edges. The formation of an interface dipole is inferred for interfaces involving both PTCDA and CuPc. The S-GaAs-PTCDA heterojunction has a straddled energy band profile whereas that of the S-GaAs-CuPc heterojunction is staggered.",

keywords = "CuPc, GaAs, Interfaces, Photoemission, PTCDA",

author = "Evans, {D. A.} and Steiner, {H. J.} and Vearey-Roberts, {A. R.} and V. Dhanak and G. Cabailh and S. O'Brien and McGovern, {I. T.} and W. Braun and Kampen, {T. U.} and S. Park and Zahn, {D. R.T.}",

note = "Funding Information: The authors would like to thank the staff of the SRS and BESSY facilities for their ready assistance and A.A. Cafolla for access to the core level data analysis software. This work was supported by the EU-LSI programme and the EPSRC (GR/M67414), and was performed within the EU DIODE network (HPRN-CT-1999-00164). Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "2003",

month = may,

day = "15",

doi = "10.1016/S0169-4332(03)00467-7",

language = "English",

volume = "212-213",

pages = "417--422",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "SPEC.",

}

TY - JOUR

T1 - Perylenes and phthalocyanines on GaAs(0 0 1) surfaces

AU - Evans, D. A.

AU - Steiner, H. J.

AU - Vearey-Roberts, A. R.

AU - Dhanak, V.

AU - Cabailh, G.

AU - O'Brien, S.

AU - McGovern, I. T.

AU - Braun, W.

AU - Kampen, T. U.

AU - Park, S.

AU - Zahn, D. R.T.

N1 - Funding Information: The authors would like to thank the staff of the SRS and BESSY facilities for their ready assistance and A.A. Cafolla for access to the core level data analysis software. This work was supported by the EU-LSI programme and the EPSRC (GR/M67414), and was performed within the EU DIODE network (HPRN-CT-1999-00164). Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The growth of perylenes and phthalocyanines on chalcogen-passivated (0 0 1) surfaces of GaAs has been studied using photoelectron spectroscopy. 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) and copper phthalocyanine (CuPc) form abrupt interfaces without the formation of new covalent/ionic bonds. The substrate core levels are narrowed by PTCDA adsorption and broadened by CuPc adsorption. PTCDA molecules adsorb predominantly at defect sites removing inhomogeneous Fermi level pinning. CuPc adsorption on the S-terminated GaAs(0 0 1) surface generates new states within the GaAs band gap and this causes the substrate Fermi level to shift relative to the band edges. The formation of an interface dipole is inferred for interfaces involving both PTCDA and CuPc. The S-GaAs-PTCDA heterojunction has a straddled energy band profile whereas that of the S-GaAs-CuPc heterojunction is staggered.

AB - The growth of perylenes and phthalocyanines on chalcogen-passivated (0 0 1) surfaces of GaAs has been studied using photoelectron spectroscopy. 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) and copper phthalocyanine (CuPc) form abrupt interfaces without the formation of new covalent/ionic bonds. The substrate core levels are narrowed by PTCDA adsorption and broadened by CuPc adsorption. PTCDA molecules adsorb predominantly at defect sites removing inhomogeneous Fermi level pinning. CuPc adsorption on the S-terminated GaAs(0 0 1) surface generates new states within the GaAs band gap and this causes the substrate Fermi level to shift relative to the band edges. The formation of an interface dipole is inferred for interfaces involving both PTCDA and CuPc. The S-GaAs-PTCDA heterojunction has a straddled energy band profile whereas that of the S-GaAs-CuPc heterojunction is staggered.

KW - CuPc

KW - GaAs

KW - Interfaces

KW - Photoemission

KW - PTCDA

UR - http://www.scopus.com/inward/record.url?scp=0037566014&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00467-7

DO - 10.1016/S0169-4332(03)00467-7

M3 - Article

AN - SCOPUS:0037566014

SN - 0169-4332

VL - 212-213

SP - 417

EP - 422

JO - Applied Surface Science

JF - Applied Surface Science

IS - SPEC.

ER -

Perylenes and phthalocyanines on GaAs(0 0 1) surfaces

Abstract

Keywords

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