Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

Ch Maierhofer; D. R.T. Zahn; D. A. Evans; K. Horn

doi:10.1063/1.352837

Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

Ch Maierhofer^*, D. R.T. Zahn, D. A. Evans, K. Horn

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔE_v.

Original language	English
Pages (from-to)	4089-4091
Number of pages	3
Journal	Journal of Applied Physics
Volume	73
Issue number	8
DOIs	https://doi.org/10.1063/1.352837
Publication status	Published - 1993

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@article{496e4d055f10400ab7367bee563c9ea1,

title = "Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions",

abstract = "Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔEv.",

author = "Ch Maierhofer and Zahn, {D. R.T.} and Evans, {D. A.} and K. Horn",

year = "1993",

doi = "10.1063/1.352837",

language = "English",

volume = "73",

pages = "4089--4091",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

AU - Maierhofer, Ch

AU - Zahn, D. R.T.

AU - Evans, D. A.

AU - Horn, K.

PY - 1993

Y1 - 1993

N2 - Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔEv.

AB - Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔEv.

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U2 - 10.1063/1.352837

DO - 10.1063/1.352837

M3 - Article

AN - SCOPUS:36449004391

SN - 0021-8979

VL - 73

SP - 4089

EP - 4091

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions

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