TY - JOUR
T1 - Synchrotron radiation study of metallic titanium deposited on dielectric substrates
AU - Bogan, Justin
AU - Selvaraju, Venkateswaran
AU - Brady-Boyd, Anita
AU - Hughes, Greg
AU - O'Connor, Robert
N1 - Funding Information:
The authors would like to gratefully acknowledge the financial support from the SFI PI programme under Grant No. 13/IA/1955.
Publisher Copyright:
© 2018 Author(s).
PY - 2018/7/1
Y1 - 2018/7/1
N2 - In this work, the authors present a detailed synchrotron radiation photoemission study of the interactions of metallic titanium with dielectric substrates. In particular, the authors focus on the formation of titanium silicide upon deposition when titanium interacts with SiO2 based substrates. Both TiSi and TiSi2 are present, but TiSi2 grows preferentially upon annealing. When deposited on carbon-containing low-k materials, titanium interacts with the surface to form titanium carbide and titanium silicide. At elevated temperature, carbon in the low-k dielectric assists in the conversion of titanium silicide to titanium silicate.
AB - In this work, the authors present a detailed synchrotron radiation photoemission study of the interactions of metallic titanium with dielectric substrates. In particular, the authors focus on the formation of titanium silicide upon deposition when titanium interacts with SiO2 based substrates. Both TiSi and TiSi2 are present, but TiSi2 grows preferentially upon annealing. When deposited on carbon-containing low-k materials, titanium interacts with the surface to form titanium carbide and titanium silicide. At elevated temperature, carbon in the low-k dielectric assists in the conversion of titanium silicide to titanium silicate.
UR - http://www.scopus.com/inward/record.url?scp=85049241122&partnerID=8YFLogxK
U2 - 10.1116/1.5036943
DO - 10.1116/1.5036943
M3 - Article
AN - SCOPUS:85049241122
SN - 2166-2746
VL - 36
JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
IS - 4
M1 - 040602
ER -