The interaction of platinum with GaP(110): band bending and surface photovoltage effects

D. A. Evans*, T. P. Chen, Th Chassé, K. Horn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The study of metals deposited on semiconductor surfaces is important to determine the chemical and electronic properties of these interfaces. In the present study, the formation of PtGaP(110) interfaces at 150 and 300 K was monitored by core and valence level photoelectron spectroscopy using synchrotron radiation. Detailed analysis of band-bending reveals a strong surface photovoltage (SPV) effect, even at the higher temperature. The measured barrier height (φbn = 1.5 eV) is similar to values for chemically very different metal contacts on n-GaP(110). The temperature, metal coverage and photon flux dependence of the SPV is determined and interpreted in terms of calculations which consider the relevant current transport mechanism across the developing interface.

Original languageEnglish
Pages (from-to)233-241
Number of pages9
JournalApplied Surface Science
Volume56-58
Issue numberPart 1
DOIs
Publication statusPublished - 1992

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