The interaction of platinum with GaP(110): band bending and surface photovoltage effects

D. A. Evans; T. P. Chen; Th Chassé; K. Horn

doi:10.1016/0169-4332(92)90240-X

The interaction of platinum with GaP(110): band bending and surface photovoltage effects

D. A. Evans^*
, T. P. Chen
, Th Chassé
, K. Horn

^*Corresponding author for this work

Department of Physics

Fritz Haber Institute of the Max Planck Society

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The study of metals deposited on semiconductor surfaces is important to determine the chemical and electronic properties of these interfaces. In the present study, the formation of PtGaP(110) interfaces at 150 and 300 K was monitored by core and valence level photoelectron spectroscopy using synchrotron radiation. Detailed analysis of band-bending reveals a strong surface photovoltage (SPV) effect, even at the higher temperature. The measured barrier height (φ_bn = 1.5 eV) is similar to values for chemically very different metal contacts on n-GaP(110). The temperature, metal coverage and photon flux dependence of the SPV is determined and interpreted in terms of calculations which consider the relevant current transport mechanism across the developing interface.

Original language	English
Pages (from-to)	233-241
Number of pages	9
Journal	Applied Surface Science
Volume	56-58
Issue number	Part 1
DOIs	https://doi.org/10.1016/0169-4332(92)90240-X
Publication status	Published - 1992

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title = "The interaction of platinum with GaP(110): band bending and surface photovoltage effects",

abstract = "The study of metals deposited on semiconductor surfaces is important to determine the chemical and electronic properties of these interfaces. In the present study, the formation of PtGaP(110) interfaces at 150 and 300 K was monitored by core and valence level photoelectron spectroscopy using synchrotron radiation. Detailed analysis of band-bending reveals a strong surface photovoltage (SPV) effect, even at the higher temperature. The measured barrier height (φbn = 1.5 eV) is similar to values for chemically very different metal contacts on n-GaP(110). The temperature, metal coverage and photon flux dependence of the SPV is determined and interpreted in terms of calculations which consider the relevant current transport mechanism across the developing interface.",

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doi = "10.1016/0169-4332(92)90240-X",

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T1 - The interaction of platinum with GaP(110)

T2 - band bending and surface photovoltage effects

AU - Evans, D. A.

AU - Chen, T. P.

AU - Chassé, Th

AU - Horn, K.

PY - 1992

Y1 - 1992

N2 - The study of metals deposited on semiconductor surfaces is important to determine the chemical and electronic properties of these interfaces. In the present study, the formation of PtGaP(110) interfaces at 150 and 300 K was monitored by core and valence level photoelectron spectroscopy using synchrotron radiation. Detailed analysis of band-bending reveals a strong surface photovoltage (SPV) effect, even at the higher temperature. The measured barrier height (φbn = 1.5 eV) is similar to values for chemically very different metal contacts on n-GaP(110). The temperature, metal coverage and photon flux dependence of the SPV is determined and interpreted in terms of calculations which consider the relevant current transport mechanism across the developing interface.

AB - The study of metals deposited on semiconductor surfaces is important to determine the chemical and electronic properties of these interfaces. In the present study, the formation of PtGaP(110) interfaces at 150 and 300 K was monitored by core and valence level photoelectron spectroscopy using synchrotron radiation. Detailed analysis of band-bending reveals a strong surface photovoltage (SPV) effect, even at the higher temperature. The measured barrier height (φbn = 1.5 eV) is similar to values for chemically very different metal contacts on n-GaP(110). The temperature, metal coverage and photon flux dependence of the SPV is determined and interpreted in terms of calculations which consider the relevant current transport mechanism across the developing interface.

UR - https://www.scopus.com/pages/publications/0000858982

U2 - 10.1016/0169-4332(92)90240-X

DO - 10.1016/0169-4332(92)90240-X

M3 - Article

AN - SCOPUS:0000858982

SN - 0169-4332

VL - 56-58

SP - 233

EP - 241

JO - Applied Surface Science

JF - Applied Surface Science

IS - Part 1

ER -

The interaction of platinum with GaP(110): band bending and surface photovoltage effects

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