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Abstract
The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.
Original language | English |
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Article number | 123701 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 12 |
Early online date | 26 Sept 2013 |
DOIs | |
Publication status | Published - 01 Oct 2013 |
Keywords
- photoemission
- INTERFACE
- energetics
- III-V semiconductor
- ORGANIC SEMICONDUCTORS
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Dive into the research topics of 'Transport and optical gaps and energy band alignment at organic-inorganic interfaces'. Together they form a unique fingerprint.Projects
- 1 Finished
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Photoelectron Spectroscopy and Microscopy using Synchrotron Radiation for Exploiting Diamond surfaces and Interfaces
Evans, A. (PI)
Engineering and Physical Sciences Research Council
01 Oct 2009 → 30 Sept 2013
Project: Externally funded research