Transport and optical gaps and energy band alignment at organic-inorganic interfaces

D. A. Evans, Alex Raymond Vearey-Roberts, O. R. Roberts, G. T. Williams, S. P. Cooil, D. P. Langstaff, G. Cabailh, I. T. McGovern, J. P. Goss

Research output: Contribution to journalArticlepeer-review

4 Citations (SciVal)
208 Downloads (Pure)

Abstract

The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from -0.08 (GaP) to -0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 +- 0.3) eV.
Original languageEnglish
Article number123701
Number of pages8
JournalJournal of Applied Physics
Volume114
Issue number12
Early online date26 Sept 2013
DOIs
Publication statusPublished - 01 Oct 2013

Keywords

  • photoemission
  • INTERFACE
  • energetics
  • III-V semiconductor
  • ORGANIC SEMICONDUCTORS

Fingerprint

Dive into the research topics of 'Transport and optical gaps and energy band alignment at organic-inorganic interfaces'. Together they form a unique fingerprint.

Cite this