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Vapor deposited thin organic–inorganic capping layers preventing copper line oxidation in polymer-based RDL technologies

  • Emmanuel Chery*
  • , Anita Brady-Boyd
  • , Yuyuan Lin
  • , Michael Grimes
  • , David Springer
  • , John Slabbekoorn
  • , Edward Walsby
  • , Kristof Croes
  • , Eric Beyne
  • *Corresponding author for this work
  • IMEC
  • KLA Corp. (SPTS Division)

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Hybrid organic–inorganic and inorganic multilayer films were deposited using a combination of CVD and ALD processes to develop an ultra-thin barrier to prevent copper oxidation in a polymer-based RDL technology. ALD layers are known to be effective permeation barriers due to their uniformity and pinhole-free morphology. However, the low deposition temperature, required by the presence of polymers in the final product, increases their susceptibility to degradation by water. In this study, polymer-embedded copper lines protected by ultra-thin vapor deposited cappings, processed at temperatures below or equal to 100 °C, were exposed to oxidation and corrosion stress tests for more than 1000 h. Above an inorganic layer critical thickness of 5 nm, copper oxidation is fully blocked. In addition, it is demonstrated that some of these ultra-thin layers can withstand a corrosion stress test paving the road for their integration in polymer-based RDL technologies.

Original languageEnglish
Article number111896
Number of pages7
JournalMicroelectronic Engineering
Volume266
Early online date14 Oct 2022
DOIs
Publication statusPublished - 15 Oct 2022
Externally publishedYes

Keywords

  • Atomic layer-deposited
  • Capping layer
  • Copper oxidation
  • RDL technology

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