Abstract
Hybrid organic–inorganic and inorganic multilayer films were deposited using a combination of CVD and ALD processes to develop an ultra-thin barrier to prevent copper oxidation in a polymer-based RDL technology. ALD layers are known to be effective permeation barriers due to their uniformity and pinhole-free morphology. However, the low deposition temperature, required by the presence of polymers in the final product, increases their susceptibility to degradation by water. In this study, polymer-embedded copper lines protected by ultra-thin vapor deposited cappings, processed at temperatures below or equal to 100 °C, were exposed to oxidation and corrosion stress tests for more than 1000 h. Above an inorganic layer critical thickness of 5 nm, copper oxidation is fully blocked. In addition, it is demonstrated that some of these ultra-thin layers can withstand a corrosion stress test paving the road for their integration in polymer-based RDL technologies.
| Original language | English |
|---|---|
| Article number | 111896 |
| Number of pages | 7 |
| Journal | Microelectronic Engineering |
| Volume | 266 |
| Early online date | 14 Oct 2022 |
| DOIs | |
| Publication status | Published - 15 Oct 2022 |
| Externally published | Yes |
Keywords
- Atomic layer-deposited
- Capping layer
- Copper oxidation
- RDL technology
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Dive into the research topics of 'Vapor deposited thin organic–inorganic capping layers preventing copper line oxidation in polymer-based RDL technologies'. Together they form a unique fingerprint.Press/Media
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Findings from Interuniversity Microelectronics Centre (IMEC) Yields New Findings on Technology (Vapor Deposited Thin Organic-inorganic Capping Layers Preventing Copper Line Oxidation In Polymer-based Rdl Technologies)
14 Dec 2022
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