X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces

I. T. McGovern; A. Koebbel; A. Leslie; E. Dudzik; Caroline E. J. Mitchell; A. B. McLean; A. Patchett; D. R.T. Zahn; D. A. Evans; D. P. Woodruff; B. C.C. Cowie

doi:10.1016/S0169-4332(00)00413-X

X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces

I. T. McGovern^*, A. Koebbel, A. Leslie, E. Dudzik, Caroline E. J. Mitchell, A. B. McLean, A. Patchett, D. R.T. Zahn, D. A. Evans, D. P. Woodruff, B. C.C. Cowie

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(100) surfaces, prepared by wet-etch in (NH₄)₂S solution followed by UHV anneal. Standing wave profiles for sulphur 1s photoyield in three planes (220, 311 and 311) indicate that sulphur is close to the phosphorus site. Coherent positions and fractions are compared with the predictions of a number of models of the surface, including novel 2×2 structures. The experimental data can be reproduced by a general two-dimer model, but it is more likely that the data are reflecting significant disorder.

Original language	English
Pages (from-to)	196-200
Number of pages	5
Journal	Applied Surface Science
Volume	166
Issue number	1
DOIs	https://doi.org/10.1016/S0169-4332(00)00413-X
Publication status	Published - 09 Oct 2000

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@article{143e7a5ffe7444eab10591ac8d3281d3,

title = "X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces",

abstract = "Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(100) surfaces, prepared by wet-etch in (NH4)2S solution followed by UHV anneal. Standing wave profiles for sulphur 1s photoyield in three planes (220, 311 and 311) indicate that sulphur is close to the phosphorus site. Coherent positions and fractions are compared with the predictions of a number of models of the surface, including novel 2×2 structures. The experimental data can be reproduced by a general two-dimer model, but it is more likely that the data are reflecting significant disorder.",

author = "McGovern, {I. T.} and A. Koebbel and A. Leslie and E. Dudzik and Mitchell, {Caroline E. J.} and McLean, {A. B.} and A. Patchett and Zahn, {D. R.T.} and Evans, {D. A.} and Woodruff, {D. P.} and Cowie, {B. C.C.}",

note = "Funding Information: The authors thank the staff of Daresbury Laboratory and acknowledge the support of HCM-LSF and the HCM Networks CT93-0317 and CT93-0358. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2000",

month = oct,

day = "9",

doi = "10.1016/S0169-4332(00)00413-X",

language = "English",

volume = "166",

pages = "196--200",

journal = "Applied Surface Science",

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TY - JOUR

T1 - X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces

AU - McGovern, I. T.

AU - Koebbel, A.

AU - Leslie, A.

AU - Dudzik, E.

AU - Mitchell, Caroline E. J.

AU - McLean, A. B.

AU - Patchett, A.

AU - Zahn, D. R.T.

AU - Evans, D. A.

AU - Woodruff, D. P.

AU - Cowie, B. C.C.

N1 - Funding Information: The authors thank the staff of Daresbury Laboratory and acknowledge the support of HCM-LSF and the HCM Networks CT93-0317 and CT93-0358. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2000/10/9

Y1 - 2000/10/9

N2 - Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(100) surfaces, prepared by wet-etch in (NH4)2S solution followed by UHV anneal. Standing wave profiles for sulphur 1s photoyield in three planes (220, 311 and 311) indicate that sulphur is close to the phosphorus site. Coherent positions and fractions are compared with the predictions of a number of models of the surface, including novel 2×2 structures. The experimental data can be reproduced by a general two-dimer model, but it is more likely that the data are reflecting significant disorder.

AB - Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(100) surfaces, prepared by wet-etch in (NH4)2S solution followed by UHV anneal. Standing wave profiles for sulphur 1s photoyield in three planes (220, 311 and 311) indicate that sulphur is close to the phosphorus site. Coherent positions and fractions are compared with the predictions of a number of models of the surface, including novel 2×2 structures. The experimental data can be reproduced by a general two-dimer model, but it is more likely that the data are reflecting significant disorder.

UR - http://www.scopus.com/inward/record.url?scp=0034300371&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(00)00413-X

DO - 10.1016/S0169-4332(00)00413-X

M3 - Article

AN - SCOPUS:0034300371

SN - 0169-4332

VL - 166

SP - 196

EP - 200

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

ER -

X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces

Abstract

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