ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

D. N. Gnoth^*, T. L. Ng, I. B. Poole, D. Andrew Evans, N. Maung, A. C. Wright

^*Corresponding author for this work

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@article{4779fd4950144281ac0a512a4c7cd3b3,

title = "ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth",

author = "Gnoth, {D. N.} and Ng, {T. L.} and Poole, {I. B.} and Evans, {D. Andrew} and N. Maung and Wright, {A. C.}",

year = "1998",

month = feb,

day = "2",

doi = "10.1016/S0022-0248(98)80278-9",

language = "English",

volume = "184-185",

pages = "1338--1338",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - ZnSe metal organic vapour-phase epitaxy on GaAs

T2 - substrate preparation as the limiting factor in ZnSe growth

AU - Gnoth, D. N.

AU - Ng, T. L.

AU - Poole, I. B.

AU - Evans, D. Andrew

AU - Maung, N.

AU - Wright, A. C.

PY - 1998/2/2

Y1 - 1998/2/2

U2 - 10.1016/S0022-0248(98)80278-9

DO - 10.1016/S0022-0248(98)80278-9

M3 - Article

SN - 0022-0248

VL - 184-185

SP - 1338

EP - 1338

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -